PART |
Description |
Maker |
HYS64T128020HM-3.7-A HYS64T128020HM-5-A |
256MB - 1GB, 214 pins
|
Infineon
|
KBE00S009M-D411 |
1Gb NAND x 2 256Mb Mobile SDRAM x 2
|
Samsung Electronic
|
KBE00S009M-D411 KBE00S009M-D4110 |
1Gb NAND x 2 256Mb Mobile SDRAM x 2 SPECIALTY MEMORY CIRCUIT, PBGA137
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
EBD52UC8AARA-7A EBD52UC8AARA-7B EBD25EC8AJFA EBD25 |
512MB DDR SDRAM SO DIMM 256MB Unbuffered DDR SDRAM DIMM 1GB Unbuffered DDR SDRAM DIMM 512MB Registered DDR SDRAM DIMM 256MB DDR SDRAM SO DIMM 512MB Unbuffered DDR SDRAM DIMM 1GB DDR SDRAM SO DIMM 1GB Registered DDR SDRAM DIMM 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
http:// ELPIDA MEMORY INC
|
HYS72D128021GR-7-B HYS72D64020GR-8-B HYS72D128020G |
DDR SDRAM Modules - 512MB (64Mx72) PC2100 1-bank DDR SDRAM Modules - 256MB (32Mx72) PC1600 1-bank DDR SDRAM Modules - 512MB (64Mx72) PC1600 1-bank DDR SDRAM Modules - 1GB (128Mx72) PC1600 2-bank DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank DDR SDRAM Modules - 1GB (128Mx72) PC2100 2-bank 2.5 V 184-pin Registered DDR-I SDRAM Modules
|
INFINEON[Infineon Technologies AG]
|
HYB39S256800CT-8 HYB39S256400CT-7.5 HYB39S256800CT |
256Mb (64M x 4) PC133 3-3-3 256Mb (32M x 8) PC133 3-3-3 256Mb (32M x 8) PC100 2-2-2 56Mb的(32M的8)PC100-2-2 x16 SDRAM x16内存
|
Toshiba, Corp. SIEMENS AG
|
HYS72V128300GR-7-A HYS72V128300GR-75-A HYS72V2563 |
SDRAM Modules - 256MB PC133 (2-2-2) 1-bank; End-of-Life SDRAM Modules - 256MB PC133 (3-3-3) 1-bank; End-of-Life SDRAM Modules - 1GB PC133 (3-3-3) 2-bank; End-of-Life SDRAM Modules - 128MB PC133 (2-2-2) 1-bank; End-of-Life SDRAM Modules - 512MB PC133 (2-2-2) 1-bank; End-of-Life SDRAM Modules - 1GB PC133 (2-2-2) 2-bank; End-of-Life SDRAM Modules - 512MB PC133 (3-3-3) 1-bank; End-of-Life SDRAM Modules - 256MB PC100 (2-2-2) 1-bank End-of-Life SDRAM Modules - 128MB PC133 (3-3-3) 1-bank; End-of-Life PC133 Registered SDRAM-Modules
|
INFINEON[Infineon Technologies AG]
|
K5D5657ACM-F015 |
MCP / 256Mb NAND and 256Mb Mobile SDRAM
|
Samsung Electronics
|
WV3EG265M72EFSU262D4S WV3EG265M72EFSU265D4SG |
1GB - 2x64Mx72 DDR SDRAM, UNBUFFERED, PLL, FBGA 1GB 2x64Mx72 DDR内存,无缓冲,锁相环,FBGA封装
|
Square D by Schneider Electric Diodes, Inc.
|
K5D5657ACM K5D5657ACM-F015 |
256Mb NAND and 256Mb Mobile SDRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
WV3EG216M64STSU335D4NG |
256MB - 2x16Mx64 DDR SDRAM UNBUFFERED 256MB 2x16Mx64 DDR内存缓冲
|
Electronic Theatre Controls, Inc.
|